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NXP Semiconductors
10. Dynamic characteristics
10.1 Flash memory
Table 8. Flash characteristics
T amb = ? 40 ° C to +85 ° C, unless otherwise specified.
LPC11C12/C14
Symbol
N endu
t ret
t er
Parameter
endurance
retention time
erase time
Conditions
powered
unpowered
sector or multiple
[1]
Min
10000
10
20
95
Typ
-
-
-
100
Max
-
-
-
105
Unit
cycles
years
years
ms
consecutive
sectors
t prog
programming
[2]
0.95
1
1.05
ms
time
[1]
[2]
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
10.2 External clock
Table 9. Dynamic characteristic: external clock
T amb = ? 40 ° C to +85 ° C; V DD over specified ranges. [1]
Symbol
f osc
T cy(clk)
t CHCX
t CLCX
t CLCH
t CHCL
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
Conditions
Min
1
40
T cy(clk) × 0.4
T cy(clk) × 0.4
-
-
Typ [2]
-
-
-
-
-
-
Max
25
1000
-
-
5
5
Unit
MHz
ns
ns
ns
ns
ns
[1]
[2]
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 ° C), nominal supply
voltages.
t CHCX
t CHCL
t CLCX
t CLCH
T cy(clk)
002aaa907
Fig 17. External clock timing (with an amplitude of at least V i(RMS) = 200 mV)
LPC11C12_C14_0
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 00.05 — 23 April 2010
? NXP B.V. 2010. All rights reserved.
34 of 49
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